High on/off ratio SiO2-based memristors for neuromorphic computing: understanding the switching mechanisms through theoretical and electrochemical aspects > Journal articles | 고려대 박태준 교수님 ISML 연구실

Publication

Intelligent Semiconductor Materials Lab

Journal articles

Journal articles

2024 High on/off ratio SiO2-based memristors for neuromorphic computing: understanding the switching mechanisms through theoretical and electrochemical aspects

페이지 정보

작성자 최고관리자 작성일 24-03-23 12:45

본문

Author: F. Qin, Y. Zhang, Z. Guo, T. J. Park, H. Park, C. S. Kim, J. Park, X. Fu, K. No, H. W. Song, X. Ruan, S. Lee

Journal: Materials Advances

Vol: 5

Issue: 10

Article: 4209

Year: 2024

목록

이전글Infrared Nanoimaging of Hydrogenated Perovskite Nickelate Memristive Devices 24.03.23
다음글Electrically tunable VO2-metal metasurface for mid-infrared switching, limiting, and nonlinear isolation 24.03.23